Preliminary analysis of structural defects in thin BiVO4 layer using the slow-positron-beam based facilities at JINR, Dubna

Vu Minh Trung Nguyen1, Van Tiep Nguyen2,3, Quang Hung Nguyen4,5, Anh Tuyen Luu6, Marcin Turek7, Andrzej Drozdziel7, Krzysztof Pyszniak7, Alexey A. Sidorin3, Oleg S. Orlov3, Ly Nguyen La6, Thi Hue Pham6, Thi Ngoc Hue Nguyen6, Van Phuc Tran2, Hoang V. Le8,9, Thi Ly Le8, Dinh Phong Tran8, Alexander. A. Donkov3,10, Evgeni P. Popov3,10,11, Samir F. Samadov3,12,13, M.N. Mirzayev3,12,13
1 Institute of Physics - Vietnam Academy of Science and Technology
2 Institute of Physics, Vietnam Academy of Science and Technology, Hanoi, 100000, Vietnam
3 Joint Institute for Nuclear Research, 141980 Dubna, Moscow Reg, Russia
4 Institute of Fundamental and Applied Sciences, Duy Tan University, Ho Chi Minh City 70000, Vietnam
5 Faculty of Natural sciences, Duy Tan University, Danang, 55000, Vietnam
6 Center for Nuclear Technologies, Vietnam Atomic Energy Institute, Ho Chi Minh City, 70000, Vietnam
7 Institute of Physics, Maria Curie-Skłodowska University in Lublin, M. Curie-Sklodowskiej 1, 20-03 Lublin, Poland
8 University of Science and Technology of Hanoi, Vietnam
9 Institute of Science and Technology, TNU-University of Sciences, Thai Nguyen, Vietnam
10 Institute of Solid-State Physics, Bulgarian Academy of Sciences, Sofia, 1784, Bulgaria
11 Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, Sofia, 1784, Bulgaria
12 Institute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, Baku, АZ1143, Azerbaijan
13 Khazar University, AZ1096, Baku, Azerbaijan

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Abstract

The present paper introduces the slow-positron beam system at the Joint Institute for Nuclear Research (JINR). Preliminarily studies on thin films using the combined analyses of the variable energy Doppler broadening (VEDB) and variable-energy electron-momentum distribution (VEEMD) measurements at JINR are also reported. These studies provide a unique tool for the in-depth investigations of the structural defects in nanomaterial as thin films, from material’s surface to various depths (in the range from a few nm ups to 1 µm). Application of that method to BiVO4 thin film implanted with P+ ions (200 keV) reveals that the structural defects in the thin film achieve the highest concentration in the depth range of 40 – 200 nm (VEDB analysis), whereas the introduction of P+ ions into the thin film should reduce the positron annihilation probability with high-momentum core electrons. These results open the possibility to use advanced analytical techniques for in-depth study of nanomaterial in JINR, performed, in particular, by Vietnamese scientists.

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